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2SK4021

Toshiba Semiconductor
Part Number 2SK4021
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Re...
Datasheet PDF File 2SK4021 PDF File

2SK4021
2SK4021

Overview
www.
DataSheet4U.
com 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 6.
5 ± 0.
2 5.
2 ± 0.
2 1.
5 ± 0.
2 Unit: mm 0.
6 MAX.
z Low drain-source ON-resistance: RDS (ON) = 0.
8 Ω (typ.
) z High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) 1.
6 0.
9 4.
1 ± 0.
2 5.
5 ± 0.
2 1.
1 ± 0.
2 0.
6 MAX.
Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.
5 18 20 51 4.
5 2.
0 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1.
2.
GATE DRAIN （HEAT SINK） 3.
SOURSE 0.
8 MAX.
1.
1 MAX.
1 2.
3 2.
3 2 3 0.
6 ± 0.
15 0.
6 ± 0.
15 2 1 Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 2.
3 ± 0.
2 5.
7 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) Weight: 0.
36 g (typ.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.
25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature...


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