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BLF7G20LS-200

NXP
Part Number BLF7G20LS-200
Manufacturer NXP
Description Power LDMOS transistor
Published Jul 11, 2010
Detailed Description www.DataSheet4U.com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. P...
Datasheet PDF File BLF7G20LS-200 PDF File

BLF7G20LS-200
BLF7G20LS-200

Overview
www.
DataSheet4U.
com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev.
01 — 3 June 2010 Objective data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 VDS (V) 28 PL(AV) (W) 55 Gp (dB) 18 ηD (%) 33 ACPR (dBc) −29[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low...


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