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2SK3906

Toshiba Semiconductor
Part Number 2SK3906
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com 2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3906 Swi...
Datasheet PDF File 2SK3906 PDF File

2SK3906
2SK3906

Overview
www.
DataSheet4U.
com 2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3906 Switching Regulator Applications • • • • • • Small gate charge: Qg = 60 nC (typ.
) Fast reverse recovery time: trr = 400 ns (typ.
) Low drain-source ON-resistance: RDS (ON) = 0.
27 Ω (typ.
) High forward transfer admittance: |Yfs| = 15S (typ.
) Low leakage current: IDSS = 500 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rat...


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