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2SK3869

Part Number	2SK3869
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Jul 7, 2010
Detailed Description	www.DataSheet4U.com 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Re...
Datasheet	2SK3869 PDF File

Overview

www.
DataSheet4U.
com 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
55 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
5 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drai...

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