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BUK652R3-40C

NXP
Part Number BUK652R3-40C
Manufacturer NXP
Description N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com BUK652R3-40C N-channel 40 V 2.3 mΩ intermediate level Automotive TrenchMOS FET Rev. 01 — 20 May 201...
Datasheet PDF File BUK652R3-40C PDF File

BUK652R3-40C
BUK652R3-40C

Overview
www.
DataSheet4U.
com BUK652R3-40C N-channel 40 V 2.
3 mΩ intermediate level Automotive TrenchMOS FET Rev.
01 — 20 May 2010 Objective data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and elec...


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