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IXGX32N170AH1

Part Number	IXGX32N170AH1
Manufacturer	IXYS
Description	High-Voltage IGBT
Published	Jun 19, 2010
Detailed Description	High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Tes...
Datasheet	IXGX32N170AH1 PDF File

Overview

High Voltage IGBT with Diode IXGX 32N170AH1 VCES IC25 V CE(sat) tfi(typ) = 1700 V = 32 A = 5.
0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V 1700 V E VGES VGEM Continuous Transient ±20 V ±30 V IC25 TC = 25°C T IC90 TC = 90°C IF90 ICM TC = 25°C, 1 ms 32 A 21 A 18 A 110 A E SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 A @ 0.
8 VCES tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 μs L PC TC = 25°C T J TJM O Tstg 350 W -55 .
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+150 °C 150 °C -55 .
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+150 °C FC Mounting force with clip 22.
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130/5.
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30 N/lb Maximum lead temperature for...

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