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IXFR14N100Q2

Part Number	IXFR14N100Q2
Manufacturer	IXYS
Description	HiPerFET Power MOSFET
Published	Jun 19, 2010
Detailed Description	Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode A...
Datasheet	IXFR14N100Q2 PDF File

Overview

Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.
6 mm (0.
063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 9.
5 56 14 50 2.
5 20 200 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 V V V...

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