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BLL1214-250R

Part Number	BLL1214-250R
Manufacturer	NXP Semiconductors
Description	LDMOS L-band radar power transistor
Features	Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp o...
Published	Jun 18, 2010
Datasheet	BLL1214-250R PDF File

Features

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 % High power gain Easy power control Ex...

Similar Datasheet

BLL1214-250 L-band radar LDMOS transistor - NXP
BLL1214-250R LDMOS L-band radar power transistor - NXP Semiconductors

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