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IXGR32N170AH1

Part Number	IXGR32N170AH1
Manufacturer	IXYS
Description	High Voltage IGBT
Published	Jun 16, 2010
Detailed Description	Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH...
Datasheet	IXGR32N170AH1 PDF File

Overview

Advance Technical Information www.
DataSheet4U.
com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.
2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 26 17 14 200 ICM = 70 @ 0.
8 VCES 10 200 -55 .
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+150 150 -55 .
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+150 V V V V A A A A A µs W °C °C °C N/lb ~V °C 5 g ISOPLUS247 (IXGR) E153432 G C E ...

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IXGR32N170AH1 High Voltage IGBT - IXYS

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