DatasheetsPDF.com

IXFC110N10P

IXYS
Part Number IXFC110N10P
Manufacturer IXYS
Description PolarHT HiPerFET Power MOSFET
Published Jun 16, 2010
Detailed Description PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet S...
Datasheet PDF File IXFC110N10P PDF File

IXFC110N10P
IXFC110N10P

Overview
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.
DataSheet4U.
com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.
0 10 158 -55 .
.
.
+175 175 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb g Features z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)