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IS41LV8200A

Integrated Silicon Solution
Part Number IS41LV8200A
Manufacturer Integrated Silicon Solution
Description 2M x 8 (16-MBIT) DYNAMIC RAM
Published Jun 16, 2010
Detailed Description IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • ...
Datasheet PDF File IS41LV8200A PDF File

IS41LV8200A
IS41LV8200A

Overview
IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 3.
3V ± 10% • Byte Write and Byte Read operation via two CAS • Lead-free available ISSI APRIL 2005 ® www.
DataSheet4U.
com DESCRIPTION The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
Th...


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