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IXFK180N15P

IXYS
Part Number IXFK180N15P
Manufacturer IXYS
Description Polar HiPerFET Power MOSFET
Published Jun 6, 2010
Detailed Description Advance Technical Information com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15...
Datasheet PDF File IXFK180N15P PDF File

IXFK180N15P
IXFK180N15P

Overview
Advance Technical Information com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A RDS(on) ≤ 11 mΩ Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 180 75 380 60 100 4 10 800 -55 .
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+175 175 -55 .
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+150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-264 (IXFK) G D (TAB) S G = Gate S = So...


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