Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev. 5, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatche...
MRFG35003N6T1 PDF File
