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MW6S010NR1

Part Number	MW6S010NR1
Manufacturer	Freescale Semiconductor
Description	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Published	Jun 3, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - ...
Datasheet	MW6S010NR1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.
3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability ...

Similar Datasheet

MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs - Freescale Semiconductor

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