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2SC5976

Toshiba Semiconductor
Part Number 2SC5976
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published May 30, 2010
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 2SC5976 High-Speed Switching Applications DC-DC Converter Applic...
Datasheet PDF File 2SC5976 PDF File

2SC5976
2SC5976

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 • High DC current gain: hFE = 250 to 400 (IC = 0.
3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 25 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 1 2 3 0.
16±0.
05 0.
15 0.
7±0.
05 Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V DC IC Collector current Pulse ICP 3.
0 A...


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