DatasheetsPDF.com

MRF9100R3

Motorola
Part Number MRF9100R3
Manufacturer Motorola
Description 26 V LATERAL N-CHANNEL RF POWER MOSFETs
Published May 29, 2010
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Tran...
Datasheet PDF File MRF9100R3 PDF File

MRF9100R3
MRF9100R3

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.
• On–Die Integrated Input Match • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.
5 dB (Typ) Efficiency @ P1dB — 53% (Typ) • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Fla...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)