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2SK3441

Toshiba Semiconductor
Part Number 2SK3441
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published May 29, 2010
Detailed Description 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Relay...
Datasheet PDF File 2SK3441 PDF File

2SK3441
2SK3441


Overview
2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 4.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 80 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 75 300 125 468 75 12.
5 150 −55 to 150 A W mJ A mJ °C °C U...



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