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K3637

Panasonic Semiconductor
Part Number K3637
Manufacturer Panasonic Semiconductor
Description 2SK3637
Published May 21, 2010
Detailed Description Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed...
Datasheet PDF File K3637 PDF File

K3637
K3637

Overview
Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.
5±0.
5 Unit: mm φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚ For PDP/For high-speed switching (10.
0) 26.
5±0.
5 (4.
5) • Low on-resistance, low Qg • High avalanche resistance (2.
0) 5˚ (4.
0) 2.
0±0.
2 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter www.
DataSheet4U.
com Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 ±30 50 200 2 000 100 3 150 −55 to +150 °C °C Unit V 3.
3±0.
3 A A mJ W 5˚ 1 2 3 5.
5±0.
3 V 18.
6±0.
5 (2.
0) Solder Dip 1: Gate 2: Drain 3: Source TO...


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