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K4X51163PC-FE

Part Number	K4X51163PC-FE
Manufacturer	Samsung semiconductor
Description	32M x16 Mobile-DDR SDRAM
Published	May 16, 2010
Detailed Description	K4X51163PC - L(F)E/G 32M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-d...
Datasheet	K4X51163PC-FE PDF File

Overview

...ata-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) com • Internal Temperature Compensated Self Refresh • Deep Power Down Mode • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center ...

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