64Mb K-die SDRAM - Samsung semiconductor
Description
K4S640832K K4S641632K
Synchronous DRAM
64Mb K-die SDRAM Specification
www.
DataSheet4U.
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Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
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1 of 14
Rev.
1.
1 February 2006
K4S640832K K4S641632K
Revision History
Revision 0.
0 0.
1 0.
2 0.
3 1.
0 1.
1 Month January March April July September February Year 2005 2005 2005 2005 2005 2006 - Target spec release - Change DC current - Delete bit organization for x4 - Delete 7ns speed bin - Final spec release - Added 5ns speed bin for x16 History
Synchronous DRAM
www.
DataSheet4U.
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2 of 14
Rev.
1.
1 February 2006
K4S640832K K4S641632K
2M x 8Bit x 4Banks / 1M x 16Bit x 4Banks SDRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) www.
DataSheet4U.
com • Pb/P...
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