DatasheetsPDF.com

K4S641632K

64Mb K-die SDRAM - Samsung semiconductor

Description

K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification www.
DataSheet4U.
com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1.
For updates or additional information about Samsung products, contact your nearest Samsung office.
2.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 of 14 Rev.
1.
1 February 2006 K4S640832K K4S641632K Revision History Revision 0.
0 0.
1 0.
2 0.
3 1.
0 1.
1 Month January March April July September February Year 2005 2005 2005 2005 2005 2006 - Target spec release - Change DC current - Delete bit organization for x4 - Delete 7ns speed bin - Final spec release - Added 5ns speed bin for x16 History Synchronous DRAM www.
DataSheet4U.
com 2 of 14 Rev.
1.
1 February 2006 K4S640832K K4S641632K 2M x 8Bit x 4Banks / 1M x 16Bit x 4Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) www.
DataSheet4U.
com • Pb/P...

Similar Datasheet

K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM - Samsung semiconductor
K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL - Samsung semiconductor
K4S641632E 64Mbit SDRAM - Samsung semiconductor
K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL - Samsung semiconductor
K4S641632H 64Mb H-die SDRAM - Samsung Electronics
K4S641632H-L60 64Mb H-die SDRAM Specification - Samsung semiconductor
K4S641632H-L70 64Mb H-die SDRAM Specification - Samsung semiconductor
K4S641632H-L75 64Mb H-die SDRAM Specification - Samsung semiconductor
K4S641632H-TC60 64Mb H-die SDRAM Specification - Samsung semiconductor
K4S641632H-TC70 64Mb H-die SDRAM Specification - Samsung semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)