2SD637 - Panasonic
Description
Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
Unit: mm
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
s Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
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q q
1.
5 R0.
9 R0.
9
0.
4
1.
0±0.
1
R
0.
0.
85
(Ta=25˚C)
Ratings 60 50 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.
5 2.
5 3 2 1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob
*
Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
1.
25±0.
05
s Absolute Maximum Ratings
0.
55±0.
1
0.
45±0.
05
max 1 1
60 50 7 160 0.
3 150 3.
5 460 0.
5
4.
1±0.
2
4.
5±0.
1
7
Unit µA µA V V V
VCE(sat)
V MHz pF
*h
FE
Rank classification
Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE
Rank
1
Transistor
PC — Ta
500 60 Ta=25˚C IB=160µA 50 1000
2SD637
IC — VCE
1200 VCE=10V Ta=25˚C
IB — VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
400
40
Base current IB (µA)
140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA
800
300
600
200
400
100
200
0 0 20 40 60 80 www.
DataSheet4U.
com 100 120 140 160
0 0 2 4 6 8 10
0 0 0.
2 0.
4 0.
6 0.
8 1.
0
Ambient tempe...
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