MMBD217SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
3
Applications • Ultra high speed switching
1 2
Marking Code: A7
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak www. DataSheet4U. com Reverse Voltage
Symbol VRM VR IO IFM IFSM Pd TJ Ts
Value 80 80 100 300 4 200 150 - 55 to + 150
Unit V V mA mA A mW
O
Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω Symbol VF IR CT trr Max. 1. 2 0. 1 3. 5 4 Unit V µA pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
MMBD217SEW
www. DataSheet4U. com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
...
MMBD217SEW PDF File
