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IS42S16100E

Part Number	IS42S16100E
Manufacturer	Integrated Silicon Solution
Description	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
Published	Apr 30, 2010
Detailed Description	IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock freq...
Datasheet	IS42S16100E PDF File

Overview

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.
3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA • Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC ...

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