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IRF6619TRPbF

Part Number	IRF6619TRPbF
Manufacturer	International Rectifier
Published	Apr 24, 2010
Description	DirectFET Power MOSFET
Detailed Description	IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFE
Datasheet	IRF6619TRPbF PDF File

Overview

IRF6619PbF IRF6619TRPbF www.
DataSheet4U.
com PD - 97084 DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.
7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l VDSS 20V max VGS RDS(on) RDS(on) ±20V max 1.
65mΩ@ 10V 2.
2mΩ@ 4.
5V Qg tot Qgd 13nC Qgs2 3.
5nC Qrr 18nC Qoss 22nC Vgs(th) 2.
0V 38nC Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT MX DirectFET ISOMETRIC Description The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6619PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
The IRF6619PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings Parameter VDS VGS ...

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IRF6619TRPbF DirectFET Power MOSFET - International Rectifier

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