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K6F3216U6M

Part Number	K6F3216U6M
Manufacturer	Samsung semiconductor
Description	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Published	Apr 23, 2010
Detailed Description	K6F3216U6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataShee...
Datasheet	K6F3216U6M PDF File

Overview

K6F3216U6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM com Revision History Revision No.
History 0.
0 0.
1 Initial draft Revised - Changed ICC2 from 35mA to 40mA for 55ns product from 25mA to 35mA for 70ns product - Changed ISB1 from 30µA to 40 µA - Changed IDR from 15 µA to 20µ A Finalize Draft Date January 31, 2002 July 30, 2002 Remark Preliminary Preliminary 1.
0 December 18, 2002 Final The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to your questions about device.
If you have any qu...

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K6F3216U6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor

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