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SEMIX151GB12E4S

Part Number	SEMIX151GB12E4S
Manufacturer	Semikron International
Description	IGBT
Published	Apr 7, 2010
Detailed Description	SEMiX151GB12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GB12E4s Features • Homogeneous Si • Trench = Trenchgate technolog...
Datasheet	SEMIX151GB12E4S PDF File

Overview

SEMiX151GB12E4s SEMiX® 1s Trench IGBT Modules SEMiX151GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C c...

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SEMIX151GB12E4S IGBT - Semikron International

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