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IXTK102N30P

IXYS Corporation
Part Number IXTK102N30P
Manufacturer IXYS Corporation
Description PolarHT Power MOSFET
Published Mar 30, 2010
Detailed Description www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 ...
Datasheet PDF File IXTK102N30P PDF File

IXTK102N30P
IXTK102N30P

Overview
www.
DataSheet4U.
com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 300 300 ±20 ±30 102 75 250 60 60 2.
5 10 700 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C TO-264 (IXTK) G D S (TAB) G = Gate S = Source D =...


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