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BUK9Y11-30B

NXP Semiconductors
Part Number BUK9Y11-30B
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Published Mar 30, 2010
Detailed Description BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 www.DataSheet4U.com Product data sheet 1. Pr...
Datasheet PDF File BUK9Y11-30B PDF File

BUK9Y11-30B
BUK9Y11-30B

Overview
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev.
01 — 30 August 2007 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.
2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.
3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.
4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.
3 mΩ (typ) I Ptot ≤ 75 W 2.
Pinning information Table 1.
Pin 4 mb Pinning Description gate (G) mounting ...


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