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STD11NM60ND

STMicroelectronics
Part Number STD11NM60ND
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Mar 18, 2010
Detailed Description STD11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DP...
Datasheet PDF File STD11NM60ND PDF File

STD11NM60ND
STD11NM60ND

Overview
STD11NM60ND Datasheet N-channel 600 V, 370 mΩ typ.
, 10 A FDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max.
RDS(on) max.
ID STD11NM60ND 650 V 450 mΩ 10 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It is ideal for bridge topologies a...


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