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STI11NM60ND

STMicroelectronics
Part Number STI11NM60ND
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Mar 18, 2010
Detailed Description STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package Features TAB Orde...
Datasheet PDF File STI11NM60ND PDF File

STI11NM60ND
STI11NM60ND

Overview
STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ.
, 10 A FDmesh II Power MOSFET in an I²PAK package Features TAB Order code VDS at TJ max.
RDS(on) max.
ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness te P Applications le • Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performa...


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