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MRF8S7170NR3

Part Number	MRF8S7170NR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Mar 18, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 0, 2/2010 www.DataSheet4U.com RF Power Field E...
Datasheet	MRF8S7170NR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev.
0, 2/2010 www.
DataSheet4U.
com RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.
7 19.
5 19.
4 hD (%) 37.
1 37.
0 37.
9 Output PAR (dB) 6.
2 6.
1 6.
1 ACPR (dBc) -38.
7 -37.
5 -37.
8 MRF8S7...

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MRF8S7170NR3 RF Power Field Effect Transistor - Freescale Semiconductor

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