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TPC8123

Toshiba Semiconductor
Part Number TPC8123
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC8123 Lithium Ion Bat...
Datasheet PDF File TPC8123 PDF File

TPC8123
TPC8123


Overview
TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.
DataSheet4U.
com TPC8123 Lithium Ion Battery Applications Power Management Switch Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.
0 mΩ (typ.
) High forward transfer admittance: |Yfs| = 36 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 −2...



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