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TPC8122

Toshiba Semiconductor
Part Number TPC8122
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications No...
Datasheet PDF File TPC8122 PDF File

TPC8122
TPC8122

Overview
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.
3 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 30S (typ.
) • Low leakage current: IDSS = −10μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t...


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