DatasheetsPDF.com

TPC8121

Toshiba Semiconductor
Part Number TPC8121
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V) TPC8121 Notebook PC Applications Lithium I...
Datasheet PDF File TPC8121 PDF File

TPC8121
TPC8121

Overview
TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V) TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.
0 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 23 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)