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TPC6108

Toshiba Semiconductor
Part Number TPC6108
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) www.DataSheet4U.com TPC6108 Notebook PC App...
Datasheet PDF File TPC6108 PDF File

TPC6108
TPC6108

Overview
TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) www.
DataSheet4U.
com TPC6108 Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7.
4 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-model: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) TENTATIVE Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Drain power dissipation(t = 5 s) Drain power dissipation(t = 5 s) Single pulse avalanche...


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