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TK50X15J1

Part Number	TK50X15J1
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 16, 2010
Detailed Description	TK50X15J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK50X15J1 DC-DC Converte...
Datasheet	TK50X15J1 PDF File

Overview

TK50X15J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK50X15J1 DC-DC Converters • Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 90 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Cha...

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TK50X15J1 N-Channel MOSFET - Toshiba Semiconductor

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