P-Channel Enhancement Mode MOSFET - ACE Technology
Description
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ACE2341
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • • • •
-20V/-3.
3A, RDS(ON)=45mΩ@VGS=-4.
5V -20V/-2.
8A, RDS(ON)= 55mΩ@VGS=-2.
5V -20V/-2.
3A, RDS(ON)= 65mΩ@VGS=-1.
8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃
Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -20 ±12 -4.
0 -2.
8 -12 -1.
0 1.
25 0.
8 V V A A A W
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
-55/150 ℃ -55/150 ℃ 140 ℃/W
VER 1.
2
1
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ACE2341
Technology
Packaging Type
SOT-23-3
3
P-Channel Enhancement Mode MOSFET
Pin 1 2 3
1 2
Description Gate Source Drain
Ordering information
Selection Guide ACE2341 XX + H Halogen - free Pb - free BM: SOT-23-3
VER 1.
2
2
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ACE2341
Technology
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
P-Channel Enhancement Mode MOSFET
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On...
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