P-Channel Enhancement Mode MOSFET - ACE Technology
Description
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ACE2305
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • • • •
-15V/-3.
5A, RDS(ON)=70mΩ@VGS=-4.
5V -15V/-3.
0A, RDS(ON)=85mΩ@VGS=-2.
5V -15V/-2.
0A, RDS(ON)=105mΩ@VGS=-1.
8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃
Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -15 ±12 -3.
5 -2.
8 -10 -1.
6 1.
25 0.
8 150 120 V V A A A W ℃ ℃/W
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
-55/150 ℃
VER 1.
2
1
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ACE2305
Technology
Packaging Type
SOT-23-3
3
P-Channel Enhancement Mode MOSFET
Pin 1 2 3
1 2
Description Gate Source Drain
Ordering information
Selection Guide ACE2305 XX + Pb - free BM: SOT-23-3
VER 1.
2
2
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ACE2305
Technology
Electrical Characteristics
(TA=25℃, Unless otherwise noted)
P-Channel Enhancement Mode MOSFET
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current D...
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