N-Channel Enhancement Mode MOSFET - ACE Technology
Description
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ACE2304
Technology
Description
N-Channel Enhancement Mode MOSFET
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • •
30V/3.
2A, RDS(ON)=65mΩ@VGS=10V 30V/2.
0A, RDS(ON)=90mΩ@VGS=4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 3.
2 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.
6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.
25 A TA=25℃ 1.
25 Power Dissipation W PD TA=70℃ 0.
8 O Operating Junction Temperature TJ 150 C Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.
2
1
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ACE2304
Technology
Packaging Type
SOT-23-3
3
N-Channel Enhancement Mode MOSFET
Pin Symbol Description 1 G Gate 2 S Source 3 D Drain
1 2
Ordering information
Selection Guide ACE2304 XX + Pb - free BM : SOT-23-3
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
Symbol
Conditions Static
Min.
Typ.
Max.
Unit
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD
VGS=0V, ID=250 uA VD=...
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