Dual N-Channel MOSFET - Fairchild Semiconductor
Description
FDMS7600AS Dual N-Channel PowerTrench® MOSFET
FDMS7600AS
Dual N-Channel PowerTrench® MOSFET
N-Channel: 30 V, 30 A, 7.
5 mΩ N-Channel: 30 V, 40 A, 2.
8 mΩ
May 2014
Features
General Description
Q1: N-Channel Max rDS(on) = 7.
5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12 mΩ at VGS = 4.
5 V, ID = 10 A
Q2: N-Channel Max rDS(on) = 2.
8 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 3.
3 mΩ at VGS = 4.
5 V, ID = 18 A RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a dual MLP package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
S2 S2 S2 G2
S1/D2
D1
D1 D1 D1 G1
Top
Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Continuous -Pulsed Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5 S2 6 S2 7 G2 8
(Note 3) TC = 25 °C TA = 25 °C TA = 25 °C TA = 25 °C
Q2
4 D1
3 D1 2 D1
Q1
1 G1
Q1
Q2
30
30
±20
±20
30 121a
40 221b
40 2.
21a 1.
01c
60 2.
51b 1.
01d
-55 to +150
Units V V
A
W °C
RθJA RθJA RθJC
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a 1251c
3.
5
501b 1201d
2
°C/W
Device Marking FDMS7600AS
Device FDMS7600AS
Package Power 56
Reel Size 13 ”
Tape Width 12 mm
Quantity 3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7600AS Rev.
C1
www.
fairchildsemi.
com
FDMS7600AS Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ
Off Charact...
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