N-Channel Power Trench SyncFET - Fairchild Semiconductor
Description
FDMC7570S N-Channel Power Trench® SyncFETTM
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December 2009
FDMC7570S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 2 mΩ Features General Description
The FDMC7570S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic Schottky body diode.
Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.
9 mΩ at VGS = 4.
5 V, ID = 21.
5 A Advanced Package and Combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode 100% UIL Tested RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification
Top
Bottom S Pin 1 S S
D
G
5 6 7 8
4 G 3 2 1
D D
S S S
D
D
D
D
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) (Note 4) Ratings 25 ±20 40 132 27 120 144 59 2.
3 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.
1 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC7570S Device FDMC7570S Package Power 33
1
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
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fairchildsemi.
com
©2009 Fairchild Semiconductor Corporation FDMC7570S Rev.
C
FDMC7570S N-Channel Power Trench® SyncFETTM
www.
DataSheet4U.
com
Electrical Characteristics TJ = 25 °C unless o...
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