N-Channel Power Trench SyncFET - Fairchild Semiconductor
Description
FDMC7660S N-Channel Power Trench® SyncFET™
January 2014
FDMC7660S
N-Channel Power Trench® SyncFET™
30 V, 20 A, 2.
2 mΩ
Features
Max rDS(on) = 2.
2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 2.
95 mΩ at VGS = 4.
5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
General Description
The FDMC7660S has been designed to minimize losses in power conversion applications.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification
Pin 1 S
S S G
D D D D
Top
Power 33
Bottom
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 40 100 20 200 128 41 2.
3
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3 53
°C/W
Device Marking FDMC7660S
Device FDMC7660S
Package Power 33
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.
C1
1
www.
fairchildsemi.
com
FDMC7660S N-Channel Power Trench® SyncFET™
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
...
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