Broadband power LDMOS transistor - NXP Semiconductors
Description
BLF645
Broadband power LDMOS transistor
Rev.
01 — 27 January 2010
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Product data sheet
1.
Product profile
1.
1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1.
Typical performance RF performance at Th = 25 °C in a common source test circuit.
Mode of operation CW, class-AB 2-tone, class-AB f (MHz) 1300 1300 VDS (V) 32 32 PL (W) 100 PL(PEP) (W) 100 Gp (dB) 18 18 ηD (%) 56 45 IMD (dBc) −32
1.
2 Features
CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.
9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 % 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.
9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion = −32 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
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BLF645
Broadband power LDMOS transistor
1.
3 Applications
Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range
2.
Pinning information
Table 2.
Pin 1 2 3 4 5 Pinning Description drain 1 drain 2 gate 1 gate2 source
[1]
Simplified outline
1 2 5
Graphic symbol
1
3 3 4 5 4
2
sym117
[1]
Connected to flange.
3.
Ordering information
Table 3.
Ordering information Package Name BLF645 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT540A Type number
4.
Limiting values
Tab...
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