P-Channel Enhancement Mode MOSFET - ACE Technology
Description
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ACE7401
Technology Description
P-Channel Enhancement Mode MOSFET
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • • • •
-30V/-2.
8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.
5A, RDS(ON)=125mΩ@VGS=-4.
5V -30V/-1.
5A, RDS(ON)=170mΩ@VGS=-2.
5V -30V/-1.
0A, RDS(ON)=240mΩ@VGS=-1.
8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS -30 V VGSS ±12 V TA=25℃ -2.
8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ -2.
1 Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.
4 A TA=25℃ 0.
33 Power Dissipation W PD TA=70℃ 0.
21 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 105 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.
2
1
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ACE7401
Technology Packaging Type
SOT-23-3
3
P-Channel Enhancement Mode MOSFET
Pin Symbol Description 1 G Gate 2 S Source 3 D Drain
1 2
Ordering information
Selection Guide ACE7401 XX + H Halogen - free Pb - free CM : SOT-323
Electrica...
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