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ACE3400

ACE Technology

N-Channel Enhancement Mode MOSFET - ACE Technology


ACE3400
ACE3400

PDF File ACE3400 PDF File



Description
www.
DataSheet4U.
com ACE3400 Technology Description N-Channel Enhancement Mode MOSFET The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features • • • • • • • • • • • • • 30V/5.
4A, RDS(ON)=38mΩ@VGS=10V 30V/4.
6A, RDS(ON)=42mΩ@VGS=4.
5V 30V/3.
8A, RDS(ON)=55mΩ@VGS=2.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 4.
5 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 3.
5 Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 1.
7 A TA=25℃ 2.
0 Power Dissipation W PD TA=70℃ 1.
3 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 90 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.
2 1 www.
DataSheet4U.
com ACE3400 Technology Packaging Type SOT-23-3 3 N-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE3400 XX + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Symbol Conditions Static Min.
Typ.
Max.
Unit V(BR)DSS VG...



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