NPN Silicon Phototransistor - Clairex Technologies
Description
CLT435
NPN Silicon Phototransistor
0.
210 (5.
33) 0.
190 (4.
83) 0.
500 (12.
7) min 0.
190 (4.
83) 0.
176 (4.
47)
®
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DataSheet4U.
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Clairex
0.
215 (5.
46) 0.
205 (5.
21)
Technologies, Inc.
March, 2001
COLLECTOR 0.
158 (4.
01) 0.
136 (3.
45) BASE N/C EMITTER 0.
100 (2.
54) dia 0.
060 (1.
52) max 0.
025 (0.
64) max 0.
019 (0.
48) 0.
016 (0.
41) 0.
147 (3.
73) 0.
137 (3.
48)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17
features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature .
-65°C to +150°C • ±9° acceptance angle operating temperature .
.
.
-65°C to +125°C • custom aspheric lensed TO-18 lead soldering temperature(1) .
.
.
.
260°C package collector-emitter voltage.
30V • transistor base is not bonded 50mA • tested and characterized at 660nm continuous collector current .
.
continuous power dissipation(2) .
.
.
.
250mW • RoHS compliant description The CLT435 is a silicon NPN phototransistor mounted in a TO-18 package which features a custom double convex glass-to-metal sealed aspheric lens.
Narrow acceptance angle enables excellent on-axis coupling.
The CLT435 is mechanically and spectrally matched to Clairex's CLE435 LED.
For additional information, call Clairex.
notes: 1.
0.
06” (1.
5mm) from the header for 5 seconds maximum 2.
Derate linearly 2.
0mW/°C from 25°C free air temperature to TA = +125°C.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
IL ICEO V(BR)CEO tr, tf θHP notes:
Light current(3) Collector dark current Collector-emitter breakdown Output rise and...
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