LED - Chip - EPIGAP optoelectronic GmbH
Description
LED - Chip
Preliminary Radiation Green Type Standard 10.
04.
2007 Technology InGaN/Al2O3
ELС-490-37
rev.
01/07 www.
DataSheet4U.
com Electrodes Both on top side
380 µm
typ.
dimensions in µm (±20 µm)
Ø 90µm 100 µm
P
typ.
thickness 90 (±20) µm front side metalization Au-alloy, 0.
5 µm backside metalization Al-alloy, 1.
5 µm
350 µm
380 µm
N
350 µm
Maximum Ratings
Tamb = 25°C, unless otherwise specified Parameter Forward current (DC) Peak forward current Operating temperature range Storage temperature range (tP ≤ 50 µs, tP /T = 1/2) Test conditions Symbol IF IFM Tamb Tstg Value 20 100 -40 to +85 -40 to +100 Unit mA mA °C °C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Luminous intensity1 Dominant wavelength Spectral bandwidth at 50% Switching time
1
Ø100
Symbol VF VR Ιv λD ∆λ0.
5 tr , t f
Min
Typ 3.
3
Max 3.
5
Unit V V
IF = 20 mA IF = 1 µA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA
5 220 480 280 490 25 20 500
mcd nm nm ns
Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type ELС-490-37 Lot N° Ιv(typ) [mcd] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.
325 b, Haus 201 Tel.
: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1
...
Similar Datasheet
- ELC-490-37 LED - Chip - EPIGAP optoelectronic GmbH