LED - Chip - EPIGAP optoelectronic GmbH
Description
LED - Chip
Preliminary Radiation Blue Type Standard 10.
04.
2007 Technology InGaN/Al2O3
ELС-470-31-1
www.
DataSheet4U.
com
rev.
02/07
Electrodes Both on top side
1000
typ.
dimensions (±25) µm
P
typ.
thickness 90 (±10) µm contact metalization gold alloy, 1.
5 µm backside metalization
N
N P
aluminium alloy, 1.
0 µm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage1) Reverse voltage Radiant power Radiant power1,2) Luminous intensity1) Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time
1) 2)
Symbol
Min
Typ
Max
Unit
IF = 20 mA IF = 350 mA IR = 10 µA IF = 20 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 20 mA
VF VF VR Φe Φe ΙV λP λP ∆λ0.
5 tr, tf 465 6000 5 8.
8
2.
7 3.
24
3.
0 3.
7
V V V
11.
5 150 6500 467 470 35 60 475
mW mW mcd nm nm nm ns
Measured on bare chip on TO-18 header information only
Labeling
Type ELС-470-31-1 Lot N° Φe(typ) [mW] VF(typ) [V] Quantity
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.
325 b, Haus 201 Tel.
: +49-30-6576 2543, Fax : +49-30-6576 2545
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Similar Datasheet
- ELC-470-31-1 LED - Chip - EPIGAP optoelectronic GmbH