LED - Chip - EPIGAP optoelectronic GmbH
Description
LED - Chip
10.
04.
2008 Radiation Violet Type Special Technology InGaN
ELС-420-21
rev.
01 www.
DataSheet4U.
com Electrodes N (cathode) up
typ.
dimensions (±50) µm
typ.
thickness 145 (±15) µm cathode gold alloy, 2.
5 µm anode gold alloy, 1.
5 µm
Absolute Maximum Ratings
at Tamb = 25° C, unless otherwise specified Parameter DC forward current Peak forward current Operating temperature range Storage temperature range Junction temperature tp≤100 µs, D = 0.
05 Test сonditions Symbol IF IFM Tamb Tstg Tj Value 500 2 -40 to +110 -40 to +110 125 Unit mA A ° C ° C ° C
Optical and Electrical Characteristics
Tamb = 25° C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Forward voltage1 Reverse voltage Radiant power
1 1,2
Symbol VF VF VR Φe Φe λP ∆λ0.
5 tr , tf
Min
Typ 2.
8 3.
1
Max 3.
2 3.
5
Unit V V V
IF = 350 mA IR = 10 µA IF = 20 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA
5 10 14 240 410 420 20 30 430
mW mW nm nm ns
Radiant power
Peak wavelength Spectral bandwidth at 50% Switching time
1) 2)
Measured on bare chip on TO-66 header only recommended on optimal heat sink
Labeling
Type ELС-420-21 Lot N° Φe(typ) [mW] VF(typ) [V] λP(typ) [nm] Quantity
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.
All operating parameters must be validated for each application by the customer themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.
325 b, Haus 201 1 of 1 Tel.
: +49-30-6576 2543, Fax : +49-30-6576 2545
...
Similar Datasheet
- ELC-420-21 LED - Chip - EPIGAP optoelectronic GmbH
